Lattice site location of impurities in semiconductors


50000403v1779

Promoter: André Vantomme, Wilfried Vandervorst,Kristiaan Temst

details
Description: The exact lattice site occupied by impurities in a semiconductor host drastically determine their properties, which can be either beneficial (as an electrical, optical, magnetic… dopant) or detrimental. By studying the anisotropic emission of charged particles, following the radioactive decay of implanted impurities, it is possible to determine the position of the impurity with a very high precision (down to 0.01 nm). This knowledge can finally lead to the manipulation of occupied lattice site(s) by varying external parameters, e.g. thermal treatment, co-doping, electron irradiation etc. These emission channeling experiments are mainly performed at the ISOLDE facility at CERN (Geneva) and are compared to existing ab initio calculations. These physical observations will be coupled to the electrical properties such sheet resistance, mobility, defect distribution thus providing a complete understanding of the impurity behavior during implantation and subsequent annealing.


Key words: nanostructures, semiconductors

Latest application date: 2010-04-06

Financing: available

Type of Position: scholarship

Duration of the Project : 4 years

Link: http://fys.kuleuven.be/iks/nvsf/

Research group: Department of Physics and Astronomy

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